New Features

Improvements since Version 8.85:

1. The S-parameter Export commands in the Analysis Module were generalized to allow exporting the S-parameters, noise parameters and mapping parameters of multiple parallel connected copies (or fractions) of the circuit analyzed. This is useful when matching or modifications networks are required for two or more stages connected in parallel. Previously this situation could be handled only by resorting to the nodal circuit description capabilities provided in MultiMatch or by designing the networks before combining the transistors. The fraction option can be used to set up the parameters of a unit transistor when a multiple gate intrinsic FET or HEMT has been analyzed.

2. The layers to be used when the MultiMatch artwork is exported to a DXF file can now be modified by using the Modify | Preferences Command. Select the Edit Colors command in the dialog box.

3. Corrections were made to issues relating to the Series and Shunt Parallel-Plate Capacitor Commands (SPLC, GPLC commands).

4. The contact resistance to be used with thin-film resistors and fringing capacitance for plate capacitors can now be specified by using the Artwork | Modify Artwork Options and Parameters Command. New Microwave Office Export options were also added in this dialog. Other options were also added to this dialog.

5. Improvements were made to the artwork created for plate capacitors (MMICs). The DXF export capability was also improved. This includes allowing specification of the DXF layers to be used for the export. The DXF files created can be imported in Sonnet Software's  (TM) EM simulator for verification and fine tuning. An alternative route to EM simulation of MultiMatch networks is available through Microwave Office (TM).

6. A correction was made to commensurate impedance matching. Good solutions synthesized were sometimes not available in the Results Section because of an inconsistency in the ground inductance specification for shorted stubs.

7. A correction was made to the calculation of the noise figure when two different current-series feedback blocks are used.

8. The label used when a Microwave Office (TM) script for a circuit with a voltage-shunt feedback loop is created was corrected.

9. A command (sTRL) was added in the Analysis Module to specify a microstrip line geometrically. Because the length of the line will not be adjusted when the schematic is transformed to artwork, this command should not be used at positions where step, TEE or cross junctions are required.

10. An error in exporting purely lumped modification networks was fixed in the Device-Modification Section.

11. A bug was fixed in the Non-Commensurate Matching Section. When an inductor (instead of a via) was used for the ground connections, the inductance was not always used during synthesis in recent releases.

12. Several Activate | De-activate issues were resolved (schematic editing).

13. The Enter key can now also be used to edit the value of the component selected on the schematic or to edit the dimensions of the selected artwork component.

14. Warnings are now issued when too many passband frequencies are used when one of the Impedance-Matching Wizards is launched in the Analysis Module.

15. An artwork issue when two two-ports are used without any connecting components was resolved.

16. The Ctrl+A shortcut key can now be used to select all the elements in a schematic.

17. A new Schematic Editing Command ("ITPT") for de-embedding the S-parameters and the noise parameters of a two-port from a schematic was added. This command is useful when models are fitted to transistors.

18. The 17 character limit on transistor, two-port, one-port and nodal block names was lifted and increased to 35 characters.

19. An error in placement of the input port in Microwave Office (TM) scripts was corrected.

20. Improvements were made to the schematic (text fonts, etc.).

21. The precision to be used when Microwave Office (TM) scripts are created can now be specified in the Artwork | Artwork Options Dialog. Note that the X-model option should be used for improved accuracy in the simulation at the higher microwave frequencies.  The specified precision is also used for the lines widths in the MultiMatch artwork created.

22. The parallel-plate capacitor commands ("SPLC"; "GPLC") were extended to allow additional specifications. These include specify the loss resistance associated with the capacitor in both the series and shunt cases, and the series inductance when a series parallel-plate capacitor is used. Note that the sequence of the capacitance density specification and the ground inductance specification were reversed in the GPLC command.

23. An error which may have occurred when the artwork vectors for a transistor are edited on the artwork was corrected.

24. Some errors were introduced when the length of the transistor names were increased. These errors were corrected.

25. A correction was made to the option not to add parasitic inductance to series capacitors in the Non-Commensurate Impedance-Matching Section.

26. A few errors in writing out of range noise figure results were corrected.

27. The summary table information is now also written to the Analysis Module .out file. The information is this file is useful for copying MultiMatch results as text to other applications.

28. V8.90 has been released

29. A number of noise models were integrated into the MultiMatch small-signal model (Version 8.90). These include the Pucel and Pospieszalski models for Hemts and MesFets. The fitting factors of the noise models can be optimized in the Device-Modification Section.

30. A number of improvements were made to the modeling section (noise parameter section) (Build 3810). The option to use the noise parameters of the model fitted to interpolate the (measured) noise parameter data is now also provided (measured noise parameter data is frequently not available over the same range as the S-parameter data). If no noise parameter data was provided, the option to use the noise model fitted to estimate the noise parameter data required is now also provided.

31. The configuration restriction when the same model file is referenced more than once in the Analysis Module was removed.

32. A software protection error introduced in Build 3810 was corrected.

33. The discontinuity models, parallel-plate capacitor models and spiral inductor model can now be customized by the user. An accurate simulator (EM or otherwise) is required to do the customization. Equivalents circuits must be fitted to the simulation data, after which equations must be fitted to the component values. These equations must be specified in file read by Multimatch. Note that the option to use a center via or an offset via(s) is provided for overlay capacitors when a substrate is customized. When a centered via is used, a hole in the top plate is allowed to expose the via (reliability issues).

34. Square rectangular spiral inductors can now be used in Multimatch (SPIN command). Spirals with 5 through 24 segments are allowed. The model used for these inductors can be customized in the Professional Version (LIW850). This provides for EM level accuracy and much quicker design cycles. In-line and orthogonal connections to the spiral are assumed depending on the number of segments specified.

35. Dimensions can now also be specified in microns. Use the Modify | Preference Command to set the units to be used. Note the the unit used in a circuit file can be modified by using the Analysis | Options Command.

36. The Hawkins noise model was implemented for bipolar transistors.

37. The marker option available on Smith Chart graphs is now also provided on rectangular graphs.

38. A command for automatically transforming a lumped inductor to an equivalent square spiral inductor is now provided on the Schematic Editing Toolbar. The inductor is transformed to a spiral with two negative length pads. These pads must be absorbed into the surrounding circuit. Note that this is consistent with the normal mixed lumped/distributed matching network synthesis flow provided in Multimatch.

39. A command for automatically transforming series or shunt lumped capacitor to an equivalent series parallel-plate capacitor or an overlay capacitor (shunt parallel-plate capacitor) is now provided on the Schematic Editing Toolbar. The capacitor is transformed to a plate capacitor with two negative length pads. These pads must be absorbed into the surrounding circuit.

40. Many improvements were made to the Multimatch schematic. These include editing all the parasitics associated with parallel-plate capacitors on the screen, as well as showing the orientation of these capacitors and that of spiral inductors on the schematic. Note that help on any of the elements used in the schematic can now also be obtained. Select the element first, press the Enter key and then select the Help option provided.

41. The Schematic Editing Toolbar was re-organized.

42. New options were added to the Artwork Options Dialog (Artwork | Artwork Options/Parameters Command). These include the option to export some components to Microwave Office (TM) as sub-circuits. This is useful when overlay capacitors are used (no equivalent command is provided in Microwave Office (TM)).

43. Corrections were made to the Device-Modification Section. Changes made to the S-parameters data was removed in some instances. A warning is also provided when the noise parameters specified requires interpolation.

44. The frequency range over which noise data provided should be considered to be valid can now be specified when a noise model is fitted to a transistor. This is required because noise data is often provided over a smaller frequency range than S-parameter data.

45. V9.0 has been released.

46. The "Insert Two-port" Command provided in the Analysis Module was extended to allow inserting a Multimatch model (small-signal) into the schematic too (Build 4030).

47. When the inductance for a spiral inductor has not been specified explicitly, the calculated value is now displayed on the schematic.

48. New options were added to simplify specification of the connecting lines and pads to be used in the Device-Modification Section.

49. A correction was made to the optimization power constraints when transistors are used in parallel.

50. Corrections were made to closing loops in the artwork when the units are set to micron.

51. V9.1 has been released (International/Unicode Visual C++ 2005 version with HTML help). Because of the Unicode features, foreign characters can now be used in the file and path names. Improvements were also made to the interface and the design flow. Interface improvements include re-arranging of toolbars and menus, icon changes, improvements to the graphics (markers and labeling), changes in the labels used in some of the tables, new commands to simplify the specification of the pads and connecting lines to be used in the Device-Modification Section, etc.

52. Improvements related to fitting noise parameters in the Device-Modification Section were made.

53. The default window titles were modified to be descriptive of the contents of each window.

54. The .s2p import feature in the Device-Modification Section was extended to handle some exceptions.

55. Corrections were made to schematic and artwork editing in the Device-Modification Section.

56. Corrections were made to the exports sections of the Synthesis Modules (Circuit file with spaces in the file name).

57. Interface improvements were made to the results section of the Impedance-Matching Modules.

58. The default location for a license file is now the Common Application Data Folder in Windows Vista (TM) and the Program Files Folder in Windows XP (TM).

59. The FET/Hemt noise model was extended to improve the fit a lower frequencies.

60. Improvements were made to the transistor modeling sections.

61. Corrections were made and new features were added to the Device-Modification Section (Text Editing Section; connecting lines and pad specifications; extra connecting lines for the lumped components). Extra connecting lines can now be added for inductors too, and quick edit commands were added for the extra connecting lines.

62. Improvements were made to the Multimatch Impedance-Matching Module (mixed lumped/distributed matching networks).

63. Version 9.2 of the Amplifier Design Wizard has been released. New features include allowing up to 16 transistors in the power analysis (previously only 4 were allowed), listing the intrinsic load terminations of the transistors for which models were created, and allowing the MOT command (Device Modification Option in the Analysis Module) to be applied to a sub-circuit in the schematic. This is useful when features in the Analysis Module not present in the Device-Modification section are used (example: multiple substrates). The artwork created for the sub-circuit can also be preserved when this option is used.

64. The DXF export features were enhanced for Multimatch MMIC designs. The airbridges and the different vias (airbridge to metal2; metal2 to metal1; metal1 to ground) are now also exported. The dielectric bricks associated with the parallel-plate capacitors can now also be exported (3D EM simulators).

65. Improvements were made to the Undo Command. These include larger undo buffers, as well as updating the active element to the element associated with the undo action in the schematic, as well as the artwork.

66. The error function for the output power (P1dB) was enhanced to provide the option to force the output power inside a specified power window (Build 4334). This feature can be used to design limiting amplifiers with Multimatch.

67. The Multimatch artwork can now be exported in Sonnet ® Software format (*.son files). Standard, component and co-calibrated ports are created as required when this is done. Various export options are also provided (metal type, airbridge height, capacitor dielectric layer parameters,  number of sheets to use for thick metal, lossless metal lid or freespace top, etc.).

68. A Device-Modification Section error associated with the MOT Command was corrected (.TSL file error message).

69. Corrections were made to the Noise Parameter Section of the Device-Modification Module.

70. When a model is fitted to a bipolar transistor an extra series noise resistor can now be specified to improve the fit to the measured noise parameters. A new weight factor for the Rbe influence was also added.

71. The Microwave Office (TM) export features were enhanced considerably . The complete Multimatch schematic (artwork) can now be exported to Microwave Office (data files included). The Export as Sub-circuits options were also expanded considerably. Template files are now available for importing Multimatch circuits into Microwave Office (required when the sub-circuit options are used).

72. The Multimatch artwork was enhanced to allow T-junctions to be rotated in 90 degree steps. A new Artwork Command is provided for this purpose.

73. The dimensions of the element selected on the artwork are now displayed in the Status Bar.

74. The input side of current-series feedback two-port (CSF block) is short-circuited in Multimatch. The option to not terminate it is now also provided (Modify | Preferences Dialog). This allows greater freedom in the artwork.

75. An instability associated with previewing the artwork for printing was corrected.

76. Multimatch vias were previously exported to Microwave Office (TM) to get the artwork right. The correct schematic for simulation is now exported with an extra via schematic which can be used when the artwork is created.